3.0V Datasheet | Specifications & PDF Download

A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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PT5618 200V Three-Phase Gate Driver DESCRIPTION The PT5618 is a high speed power MOSFET and IGBT driver with three independent high and low side refe

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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AON6794 30V N-Channel SRFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and H

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Datasheet 0.4A 150KHz 100V Buck DC to DC Converter XL7005A Features  Maximum Input Voltage 100V  Output Adjustable from 1.25V to 20V  Maximum Du

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CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement mode power field effect transistors are produced us

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density

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Description AP1P02AK -20V P-Channel Enhancement Mode MOSFET The AP1P02AK uses advanced trench technology to provide excellent RDS(ON), low gate char

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AON7403 30V P-Channel MOSFET General Description Product Summary The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultr

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AOD4184A 40V N-Channel MOSFET General Description Product Summary The AOD4184A combines advanced trench MOSFET technology with a low resistance pac

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General Description The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be

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AON7400A 30V N-Channel MOSFET General Description Product Summary • The AON7400A combines advanced trench MOSFET technology with a low resistance p

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AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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® SP706P/R/S/T, SP708R/S/T +3.0V/+3.3V Low Power Microprocessor Supervisory Circuits s Precision Low Voltage Monitor: SP706P/R and SP708R at +2.63

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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T  echcode®       2A 380KHz 20V PWM Buck DC/DC Converter DATASHEET TD1410 General Description  Features    The TD1410 is a 380 KHz fixed freque

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