| Title | |
| Description | Offered in 128Mx8 / 64Mx16 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 200us on the 2,112-byte(x8) or 1,056-word(x16) page and an erase operation can be performed in typical 1.5ms on a (128K+4K) bytes(x8) or (... |
| Features |
Voltage Supply: 3.3V Device: 2.7 V ~ 3.6V Operating Temperature: Industrial: -40 ~ 85℃ Organization Memory Cell Array: (128M + 4M) x 8bit Data Register: (2K + 64) x 8bit Automatic Program and Erase Page Program: (2K + 64) bytes Block Erase: (128K + 4K) bytes Page Read Operation Page Size: Random Read: Se... |
| Datasheet |
 IS34MC01GA08 Datasheet - 6.67MB |
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