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IS34MC01GA16 Datasheet 3.3v 1gb Slc Nand Flash Memory

Manufacturer: ISSI (now Infineon)

Overview: ADVANCED DATASHEET IS34MC01GA08/16 EET IS34MC01GA08/16 H 3.3V 1Gb SLC NAND Flash S Memory Specification and DATA Technical Notes ADVANCED Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number IS34MC01GA08 IS34MC01GA16 VCC Range 2.7V ~ 3.6V 2.7V ~ 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Offered in 128Mx8 / 64Mx16 bits, this device is 1Gbit with spare 32Mbit capacity.

The device is offered in 3.3V VCC.

Its NAND cell provides the most cost effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply:.
  • 3.3V Device: 2.7 V ~ 3.6V.
  • Operating Temperature:.
  • Industrial: -40 ~ 85℃.
  • Organization.
  • Memory Cell Array: (128M + 4M) x 8bit.
  • Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase.
  • Page Program: (2K + 64) bytes.
  • Block Erase: (128K + 4K) bytes.
  •   Page Read Operation.
  • Page Size:.
  • Random Read:.
  • Serial Access: (2K + 64) bytes 25us (Max. ) 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.

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