Datasheet4U Logo Datasheet4U.com

IS34MC01GA08 - 3.3V 1Gb SLC NAND Flash Memory

General Description

Offered in 128Mx8 / 64Mx16 bits, this device is 1Gbit with spare 32Mbit capacity.

The device is offered in 3.3V VCC.

Its NAND cell provides the most cost effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply:.
  • 3.3V Device: 2.7 V ~ 3.6V.
  • Operating Temperature:.
  • Industrial: -40 ~ 85℃.
  • Organization.
  • Memory Cell Array: (128M + 4M) x 8bit.
  • Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase.
  • Page Program: (2K + 64) bytes.
  • Block Erase: (128K + 4K) bytes.
  • 　 Page Read Operation.
  • Page Size:.
  • Random Read:.
  • Serial Access: (2K + 64) bytes 25us (Max. ) 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS3403 P-Channel Enhancement Mode MOSFET FORESEE
IS3405 P-Channel Enhancement Mode MOSFET FORESEE
IS341W Photocoupler ISOCOM
IS3020 OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC ISOCOM
IS3021 OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC ISOCOM

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS34MC01GA16 3.3V 1Gb SLC NAND Flash Memory
IS34ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS34ML01G084 1Gb(x8) 3.3V NAND FLASH MEMORY
IS34ML02G084 2Gb(x8) 3.3V NAND FLASH MEMORY
IS34ML04G0168 4Gb SLC-8b ECC

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCED DATASHEET IS34MC01GA08/16 EET IS34MC01GA08/16 H 3.3V 1Gb SLC NAND Flash S Memory Specification and DATA Technical Notes ADVANCED Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number IS34MC01GA08 IS34MC01GA16 VCC Range 2.7V ~ 3.6V 2.7V ~ 3.6V Organization X8 X16 　 PKG Type 48-TSOP I, 63-BGA 48-TSOP I, 63-BGA FEATURES  Voltage Supply:  3.3V Device: 2.7 V ~ 3.6V  Operating Temperature:  Industrial: -40 ~ 85℃  Organization  Memory Cell Array: (128M + 4M) x 8bit  Data Register: (2K + 64) x 8bit  Automatic Program and Erase  Page Program: (2K + 64) bytes  Block Erase: (128K + 4K) bytes  　 Page Read Operation  Page Size:  Random Read:  Serial Access: (2K + 64) bytes 25us (Max.) 25ns (Min.