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IS42RM32400F - 1M x 32Bits x 4Banks Mobile Synchronous DRAM

General Description

These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Key Features

  • JEDEC standard 2.5V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • Programmable Driver Strength Control - Full Strength or 1/2, 1/4 of Full Strength.
  • Deep Power Down Mode.
  • All inputs a.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42RM32400E 128Mb Mobile Synchronous DRAM
IS42RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features ƒ JEDEC standard 2.5V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle / 64ms. • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.