IS42VM16800F Datasheet 2M x 16Bits x 4Banks Mobile Synchronous DRAM

Manufacturer: ISSI (now Infineon)

Datasheet Details

Part number	IS42VM16800F
Manufacturer	ISSI (now Infineon)
File Size	451.76 KB
Description	2M x 16Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS42VM16800F Datasheet

These IS42VM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

IS42VM16800F 2M x 16Bits x 4Banks Mobile Synchronous DRAM.

JEDEC standard 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
Programmable Driver Strength Control - Full Strength or 1/2, 1/4 of Full Strength.
Deep Power Down Mode.
All inputs a.

Part Number	Description
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IS42VM32160E	4M x 32Bits x 4Banks Mobile Synchronous DRAM