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IS42VM81600E Datasheet 128Mb Mobile Synchronous DRAM

Manufacturer: ISSI (now Infineon)

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General Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Overview

IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous.

Key Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • Dee.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42VM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16800E 128Mb Mobile Synchronous DRAM
IS42VM16800F 2M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM