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IS42VS16100E - 16Mb SYNCHRONOUS DYNAMIC RAM

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General Description

S A0-A11 Address Input A0-A10 Row Address Input A11 Bank Select Address A0-A7 Column Address Input DQ0 to DQ15 Data DQ CLK System Clock Input CKE Clock Enable CS Chip Select DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42VS16100E is organized as a 524,288-word x 16-bit x 2-bank for improved performance.

The synchronous DRAMs achieve high-speed data transfer using pipeline architecture.

All inputs and outputs signals refer to the rising edge of the clock input.

Overview

IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM PRELIMINARY INFORMATION FEBRUARY.

Key Features

  • Clock frequency: 133, 100, 83 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Two banks can be operated simultaneously and independently.
  • Dual internal bank controlled by A11 (bank select).
  • Single 1.8V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • 2048 refresh cycles every 32 ms.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

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