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IS45RM32160E Datasheet 4M x 32Bits x 4Banks Mobile Synchronous DRAM

Manufacturer: ISSI (now Infineon)

Download the IS45RM32160E datasheet PDF. This datasheet also includes the IS42SM32160E variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS42SM32160E-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

Overview

IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous.

Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade).
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2, 3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45RM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS45R16160D 256-MBIT SYNCHRONOUS DRAM
IS45R16320D 512Mb SDRAM
IS45R16320F 512Mb SDRAM