IS45S32160B - 512Mb SYNCHRONOUS DRAM

A0-A12 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ31 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command 86 VSS 85 DQ15 84 VSSQ 83 DQ14 82 DQ13

• Clock frequency: 166, 143 MHz.
• Fully synchronous; all signals referenced to a positive clock edge.
• Internal bank for hiding row access/precharge.
• Single Power supply: 3.3V + 0.3V.
• LVTTL interface.
• Programmable burst length.
• (1, 2, 4, 8, full page).
• Programmable burst sequence: Sequential/Interleave.
• Auto Refresh (CBR).
• Self Refresh.
• 8192 refresh cycles every 16ms (A2 grade) or 64 ms (Com.