IS45VM32160D Datasheet 4m X 32bits X 4banks Mobile Synchronous Dram

Manufacturer: ISSI (now Infineon)

Overview: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IS45VM32160D
Manufacturer	ISSI (now Infineon)
File Size	462.27 KB
Description	4M x 32Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS45VM32160D IS42VM32160D Datasheet (PDF)

These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

JEDEC standard 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
8K refresh cycle / 64ms.
Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask function by DQM.
Internal 4 banks operat.

Part Number	Description
IS45VM32160E	4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32100D	512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45VM32200M	512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400E	128Mb Mobile Synchronous DRAM
IS45VM32400G	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400H	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32800E	2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32800M	2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM16160E	4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45VM16160M	4M x 16Bits x 4Banks Mobile Synchronous DRAM