IS46DR16640C Datasheet | ISSI

FEATURES - Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V - JEDEC standard 1.8V I/O (SSTL_18-patible) - Double data rate interface: two data transfers per clock cycle - Differential data strobe (DQS, DQS) - 4-bit prefetch architecture - On chip DLL to align DQ and DQS transitions with CK - 8 internal banks for concurrent operation - Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported - Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 and 6 supported - WRITE latency = READ latency - 1 t CK - Programmable burst lengths: 4 or 8 - Adjustable data-output drive strength, full and reduced strength options - On-die termination (ODT) ADVANCED INFORMATION DESCRIPTION MAY 2013 ISSI's 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. ADDRESS TABLE Parameter Configuration Refresh Count 128M x 8 16M x 8 x 8 banks 8K/64ms 64M x 16 8M x 16 x 8 banks 8K/64ms Row Addressing 16K (A0-A13) 8K (A0-A12) Column Addressing 1K (A0-A9) Bank Addressing BA0 - BA2 1K (A0-A9) BA0 - BA2 Precharge Addressing A10 A10 OPTIONS - Configuration(s):...