IS61SF25616
FEATURES
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- - Fast access times: 8 ns, 8.5 ns, 10 ns, and 12 ns Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data inputs and control signals Pentium TM or linear burst sequence control using MODE input Three chip enables for simple depth expansion and address pipelining mon data inputs and data outputs JEDEC 100-Pin TQFP and 119-pin PBGA package Single +3.3V +10%,
- 5% power supply Power-down snooze mode
ISSI
DESCRIPTION
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APRIL 2001
The ISSI IS61SF25616 and IS61SF25618 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and munication applications. It is organized as 262,144 words by 16 bits and 18 bits, fabricated with ISSI's advanced CMOS technology. The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass...
