IS61WV12816EDBLL - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Product Overview

ISSI

Datasheet Details

Part number	IS61WV12816EDBLL
Manufacturer	ISSI
File Size	558.32 KB
Description	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV12816EDBLL Datasheet
Additional preview pages of the IS61WV12816EDBLL datasheet.

Product details

Description

The ISSI IS61/64WV12816EDBLL is a high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by using Chip

Features

High-speed access time: 8, 10 ns.
Low Active Power: 85 mW (typical).
Low Standby Power: 7 mW (typical) CMOS standby.
Single power supply.
Vdd 2.4V to 3.6V (10 ns).
Vdd 3.3V ± 10% (8 ns).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial and Automotive temperature support.
Lead-free available.
Error Detection and E.

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Published: Jul 22, 2022 |