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IS61WV12816DALL - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

as 131,072 words by 16 bits.

high-performance CMOS technology.

Key Features

  • HIGH SPEED: (IS61/64WV12816DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV12816DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV12816DBxx).

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
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IS61WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61WV12816DALL/DALS IS61WV12816DBLL/DBLS IS64WV12816DBLL/DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM JANUARY 2013 FEATURES HIGH SPEED: (IS61/64WV12816DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV12816DAxx) — Vdd 2.4V to 3.