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IS61WV12816BLL - 128K x 16 HIGH-SPEED CMOS STATIC RAM

Download the IS61WV12816BLL datasheet PDF. This datasheet also covers the IS64WV12816BLL variant, as both devices belong to the same 128k x 16 high-speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS61WV12816BLL and IS64WV12816BLL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits.

They are fabricated using ISSI's highperformance CMOS technology.

Key Features

  • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V.
  • Operating Current: 25mA (typ. ).
  • Stand by Current: 400µA(typ. ).
  • TTL and CMOS compatible interface levels.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperatures available.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV12816BLL_ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816EFALL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV12816EFBLL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM
IS61WV1288EEBLL 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IS61WV12816BLL IS64WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM ISSI FEBRUARY 2006 ® FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • Operating Current: 25mA (typ.) • Stand by Current: 400µA(typ.) • TTL and CMOS compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperatures available • Lead-free available DESCRIPTION The ISSI IS61WV12816BLL and IS64WV12816BLL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. They are fabricated using ISSI's highperformance CMOS technology.