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IS61WV12816BLL Datasheet

Manufacturer: ISSI (now Infineon)
IS61WV12816BLL datasheet preview

IS61WV12816BLL Details

Part number IS61WV12816BLL
Datasheet IS61WV12816BLL / IS64WV12816BLL Datasheet PDF (Download)
File Size 350.44 KB
Manufacturer ISSI (now Infineon)
Description 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV12816BLL page 2 IS61WV12816BLL page 3

IS61WV12816BLL Overview

They are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

IS61WV12816BLL Key Features

  • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V
  • Operating Current: 25mA (typ.)
  • Stand by Current: 400µA(typ.)
  • TTL and CMOS patible interface levels
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperatures available
  • Lead-free available
  • 1-800-379-4774

Similar Datasheets

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Integrated Silicon Solution Logo IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

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