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IS61WV12816DBLS - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV12816DBLS datasheet PDF. This datasheet also covers the IS61WV12816DALL variant, as both devices belong to the same 128k x 16 high speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

as 131,072 words by 16 bits.

high-performance CMOS technology.

Key Features

  • HIGH SPEED: (IS61/64WV12816DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV12816DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV12816DBxx).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV12816DALL_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM ISSI
IS61WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI
IS61WV12816EFALL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI
IS61WV12816EFBLL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI
IS61WV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV12816DALL/DALS IS61WV12816DBLL/DBLS IS64WV12816DBLL/DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM JANUARY 2013 FEATURES HIGH SPEED: (IS61/64WV12816DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV12816DAxx) — Vdd 2.4V to 3.