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IS61WV12816EFALL - 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Download the IS61WV12816EFALL datasheet PDF. This datasheet also covers the IS64WV12816EFALL variant, as both devices belong to the same 128k x 16 high speed aynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

Key Features

  • High-speed access time: 8ns, 10ns, 12ns.
  • Single power supply.
  • 1.65V-2.2V VDD(IS61/64WV12816EFALL).
  • 2.4V-3.6V VDD (IS61/64WV12816EFBLL).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV12816EFALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV12816EFBLL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM
IS61WV1288EEBLL 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61/64WV12816EFALL IS61/64WV12816EFBLL 128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC APRIL 2022 KEY FEATURES • High-speed access time: 8ns, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV12816EFALL) – 2.4V-3.6V VDD (IS61/64WV12816EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction.