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IS61WV12816EFALL Datasheet

Manufacturer: ISSI (now Infineon)
IS61WV12816EFALL datasheet preview

IS61WV12816EFALL Details

Part number IS61WV12816EFALL
Datasheet IS61WV12816EFALL / IS64WV12816EFALL Datasheet PDF (Download)
File Size 607.03 KB
Manufacturer ISSI (now Infineon)
Description 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV12816EFALL page 2 IS61WV12816EFALL page 3

IS61WV12816EFALL Overview

The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design techniques including ECC (SEC-DED:.

IS61WV12816EFALL Key Features

  • High-speed access time: 8ns, 10ns, 12ns
  • Single power supply
  • 1.65V-2.2V VDD(IS61/64WV12816EFALL)
  • 2.4V-3.6V VDD (IS61/64WV12816EFBLL)
  • Error Detection and Correction with optional ERR1/ERR2 output pin
  • ERR1 pin indicates 1-bit error detection and correction
  • ERR2 pin indicates 2-bit error detection
  • Three state outputs
  • Industrial and Automotive temperature support
  • Lead-free available

Similar Datasheets

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Integrated Silicon Solution Logo IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

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