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IS61WV12816EDBLL - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

by 16 bits.

CMOS technology.

Key Features

  • High-speed access time: 8, 10 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby.
  • Single power supply.
  • Vdd 2.4V to 3.6V (10 ns).
  • Vdd 3.3V ± 10% (8 ns).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and E.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV12816EFALL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV12816EFBLL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61WV12816EDBLL IS64WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MAY 2020 FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperature support • Lead-free available • Error Detection and Error Correction FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV12816EDBLL is a high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.