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IS61WV12816EDBLL Datasheet

Manufacturer: ISSI (now Infineon)
IS61WV12816EDBLL datasheet preview

IS61WV12816EDBLL Details

Part number IS61WV12816EDBLL
Datasheet IS61WV12816EDBLL Datasheet PDF (Download)
File Size 558.32 KB
Manufacturer ISSI (now Infineon)
Description 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816EDBLL page 2 IS61WV12816EDBLL page 3

IS61WV12816EDBLL Overview

The ISSI IS61/64WV12816EDBLL is a high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.

IS61WV12816EDBLL Key Features

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical)
  • Single power supply
  • Vdd 2.4V to 3.6V (10 ns)
  • Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support

Similar Datasheets

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Integrated Silicon Solution Logo IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

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