IS61WV51232ALS Datasheet | ISSI

FEATURES - High-speed access times: 8, 10, 20 ns - High-performance, low-power CMOS process - Multiple center power and ground pins for greater noise immunity - Easy memory expansion with CE and OE options - CE power-down - Fully static operation: no clock or refresh required - TTL patible inputs and outputs - Single power supply Vdd 1.65V to 2.2V (IS61WV51232Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV51232Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V + 5% - Green Packages available: - 90-ball mini BGA (8mm x 13mm) - Industrial and Automotive Temperature Support DESCRIPTION The ISSI IS61WV51232Axx/Bxx and IS64WV51232Bxx are high-speed, 16M-bit static RAMs organized as 512K words by 32 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. The device is packaged in the JEDEC standard 90-ball BGA (8mm x 13mm). FUNCTIONAL BLOCK DIAGRAM A0-A18 VDD VSS DQa-d DECODER I/O DATA CIRCUIT 512K x 32 MEMORY ARRAY COLUMN I/O OE WE BWa-d CE2 CONTROL CIRCUIT Copyright © 2024 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not remend the use...