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IS62WV12816FBLL Datasheet Ultra Low Power CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS62/65WV12816FALL IS62/65WV12816FBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2018.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 26 mA (max) at 125°C.
  • CMOS Standby Current: 3.0 uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV12816FALL).
  • 2.2V-3.6V VDD (IS62/65WV12816FBLL).
  • Three state outputs.
  • Data Control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • 2CS Option Available.
  • Lead-free avail.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS62WV12816FALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

IS62WV12816FBLL Distributor