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IS62WV12816BLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS62WV12816BLL datasheet PDF. This datasheet also covers the IS62WV12816ALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

16 bits.

CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns, 70ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V--2.2V Vdd (62WV12816ALL).
  • 2.5V--3.6V Vdd (62WV12816BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV12816ALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS62WV1288ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV1288BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV102416ALL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS62WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS62WV10248BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV12816ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV12816ALL IS62WV12816BLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM N OVEMBER 2013 FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • 2CS Option Available • Lead-free available DESCRIPTION The ISSI IS62WV12816ALL/ IS62WV12816BLLare high- speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.