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IS62WV12816EBLL Datasheet Ultra Low Power CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS62/65WV12816EALL IS62/65WV12816EBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2014.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV12816EALL).
  • 2.2V-3.6V VDD (IS62/65WV12816EBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • 2CS Option Available.
  • Lead-free available BLOCK.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS62WV12816EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816FALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816FBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

IS62WV12816EBLL Distributor