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IS62WV12816ALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

16 bits.

CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns, 70ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V--2.2V Vdd (62WV12816ALL).
  • 2.5V--3.6V Vdd (62WV12816BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperat.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV12816ALL IS62WV12816BLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM N OVEMBER 2013 FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • 2CS Option Available • Lead-free available DESCRIPTION The ISSI IS62WV12816ALL/ IS62WV12816BLLare high- speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.