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IS64WV25616LEBLL Datasheet 256k X 16 High Speed Asynchronous CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS61WV25616LEBLL IS64WV25616LEBLL 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with LATCHED ADDRESS & ECC JULY 2019.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS61/64WV25616LEBLL are high-speed, low power, 4M bit Latched static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's highperformance CMOS technology and implemented ECC function to improve reliability.

This highly reliable process coupled with innovative circuit design techniques including ECC (SEC-DED: Single Error Correcting-Double Error Detecting) yields high-performance and highly reliable devices.

Key Features

  • High-speed access time: 12ns, 15ns.
  • Single power supply.
  • 2.4V-3.6V VDD.
  • Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ. ).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection.
  • ALE# pin to latch Address & CS# signals.
  • Industrial and Automotive temperature support.
  • Lead-free available.

IS64WV25616LEBLL Distributor

More Datasheets from ISSI (now Infineon)

Part Number Description
IS64WV25616BLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
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