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IS64WV2568FALL - 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

General Description

The ISSI IS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 8, 10ns, 12ns.
  • Low Active Current: 35mA (Max. , 10ns, I-temp).
  • Low Standby Current: 10 mA (Max. , I-temp).
  • Single power supply.
  • 1.65V-2.2V VDD(IS61/64WV2568FALL).
  • 2.4V-3.6V VDD (IS61/64WV2568FBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS64WV2568FBLL 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61/64WV2568FALL IS61/64WV2568FBLL 256Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM AUGUST 2020 KEY FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD(IS61/64WV2568FALL) – 2.4V-3.6V VDD (IS61/64WV2568FBLL)  Three state outputs  Industrial and Automotive temperature support  Lead-free available FUNCTIONAL BLOCK DIAGRAM A0 – A17 DECODER 256K x 8 MEMORY ARRAY DESCRIPTION The ISSI IS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.