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IS64WV6416DBLS Datasheet 64k X 16 High Speed Asynchronous CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits.

It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Key Features

  • HIGH SPEED: (IS61/64WV6416DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV6416DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV6416DBxx).

More Datasheets from ISSI (now Infineon)

Part Number Description
IS64WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS64WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416FBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV10248EEBLL 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS64WV6416DBLS Distributor