IS64WV102416DALL Datasheet | ISSI

IS61/64WV102416DALL IS61/64WV102416DBLL 1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEBURARY 2023 Features - High-speed access time: 10ns, 12ns - High- performance, low power CMOS process - Multiple center power and ground pins for greater noise immunity - Easy memory expansion with CS# and OE# - TTL patible inputs and outputs - Single power supply - 1.65V-2.2V VDD (IS61/64WV102416DALL) - 2.4V-3.6V VDD (IS61/64WV102416DBLL) - Packages available : - 48 ball mini BGA (6mm x 8mm) - 48 pin TSOP (Type I) - Industrial and Automotive temperature support - Lead-free available - Data Control for upper and lower bytes FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV102416DALL/BLL are high-speed, 16M bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access. The device is packaged in the JEDEC standard 48-Pin TSOP (TYPE I) and 48-pin mini BGA (6mm x 8mm). A0 - A19 VDD GND I/O0 - I/O7 I/O8 -...