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IS64WV102416DALL - 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

The ISSI IS61/64WV102416DALL/BLL are high-speed, 16M bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 10ns, 12ns.
  • High- performance, low power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CS# and OE#.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • 1.65V-2.2V VDD (IS61/64WV102416DALL).
  • 2.4V-3.6V VDD (IS61/64WV102416DBLL).
  • Packages available : - 48 ball mini BGA (6mm x 8mm) - 48 pin TSOP (Type I).
  • Industrial and Au.

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Part Number Description
IS64WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61/64WV102416DALL IS61/64WV102416DBLL 1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEBURARY 2023 FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416DALL) – 2.4V-3.6V VDD (IS61/64WV102416DBLL) • Packages available : - 48 ball mini BGA (6mm x 8mm) - 48 pin TSOP (Type I) • Industrial and Automotive temperature support • Lead-free available • Data Control for upper and lower bytes FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV102416DALL/BLL are high-speed, 16M bit static RAMs organized as 1024K words by 16 bits.