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IS64WV10248BLL - 1M x 8 HIGH-SPEED CMOS STATIC RAM

Download the IS64WV10248BLL datasheet PDF. This datasheet also covers the IS61WV10248ALL variant, as both devices belong to the same 1m x 8 high-speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

are very high-speed, low power, 1M-word by 8-bit CMOS static RAM.

performance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • VDD 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V.
  • VDD 2.4V to 3.6V (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV10248ALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS64WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV10248EEBLL 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS64WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM JUNE 2008 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – VDD 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V – VDD 2.4V to 3.6V (IS61/64WV10248BLL) speed = 10ns for Vcc = 2.4V to 3.6V speed = 8ns for Vcc = 3.