Datasheet4U Logo Datasheet4U.com

IS64WV1024BLL - 128K x 8 HIGH-SPEED CMOS STATIC RAM

General Description

power, 131,072-word by 8-bit CMOS static RAM.

high-performance CMOS technology.

Key Features

  • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V.
  • 3.6V.
  • High-performance, low-power CMOS process.
  • CMOS Low Power Operation 50 mW (typical) operating current 25 µW (typical) standby current.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS64WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS64WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416FBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • High-performance, low-power CMOS process • CMOS Low Power Operation 50 mW (typical) operating current 25 µW (typical) standby current • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Packages available: – 32-pin TSOP (Type II) – 32-pin sTSOP (Type I) – 48-Ball miniBGA (6mm x 8mm) – 32-pin 300-mil SOJ • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS63/64WV1024BLL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM.