IS64WV10248EDBLL Datasheet | ISSI

IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEBRUARY 2013 Features - High-speed access times: 8, 10, 20 ns - High-performance, low-power CMOS process - Multiple center power and ground pins for greater noise immunity - Easy memory expansion with CE and OE options - CE power-down - Fully static operation: no clock or refresh required - TTL patible inputs and outputs - Packages available: - 48-ball mini BGA (6mm x 8mm) - 44-pin TSOP (Type II) - Industrial and Automotive Temperature Support - Lead-free available DESCRIPTION The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61/64WV10248EDBLL are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61/64WV10248EDBLL operate from a single power supply and all inputs are TTL-patible. The IS61/64WV10248EDBLL are available in 48 ball mini BGA (6mm x 8mm) and 44-pin TSOP (Type II) packages. FUNCTIONAL BLOCK DIAGRAM A0-A19 Decoder Memory Array (1024Kx8) ECC Array (1024Kx4) IO0-7 I/O Data Circuit 12...