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IS64WV10248EDBLL Datasheet 1m X 8 High-speed Asynchronous CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEBRUARY.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM.

The IS61/64WV10248EDBLL are fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Packages available:.
  • 48-ball miniBGA (6mm x 8mm).
  • 44-pin TSOP (Type II).
  • Industrial and Au.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS64WV10248EEBLL 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS64WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416FBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV12816EFALL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS64WV10248EDBLL Distributor