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IS64WV10248EDBLL - 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS64WV10248EDBLL datasheet PDF. This datasheet also covers the IS61WV10248EDBLL variant, as both devices belong to the same 1m x 8 high-speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

low power, 1M-word by 8-bit CMOS static RAM.

high-performance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Packages available:.
  • 48-ball miniBGA (6mm x 8mm).
  • 44-pin TSOP (Type II).
  • Industrial and Au.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV10248EDBLL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEBRUARY 2013 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Packages available: – 48-ball miniBGA (6mm x 8mm) – 44-pin TSOP (Type II) • Industrial and Automotive Temperature Support • Lead-free available DESCRIPTION The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61/64WV10248EDBLL are fabricated using ISSI's high-performance CMOS technology.