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IS64WV10248EEBLL - 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Download the IS64WV10248EEBLL datasheet PDF. This datasheet also covers the IS61WV10248EEALL variant, as both devices belong to the same 1m x 8 high speed aynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS61/64WV10248EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 1024K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

Key Features

  • High-speed access time: 8ns, 10ns, 20ns.
  • Single power supply.
  • 1.65V-2.2V VDD (IS61WV10248EEALL).
  • 2.4V-3.6V VDD (IS61/64WV10248EEBLL).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection.
  • Package Available: - 44-pin TSOP (Type II) - 48-ball mini BGA (6mm x 8mm) - 54 pin TSOP (Type II).
  • Three state outputs.
  • Industrial and Automotive t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV10248EEALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV10248EEALL IS61/64WV10248EEBLL 1Mx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC KEY FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV10248EEALL) – 2.4V-3.6V VDD (IS61/64WV10248EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction.