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IS65C25616BL Datasheet 256K x 16 HIGH-SPEED CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Download the IS65C25616BL datasheet PDF. This datasheet also includes the IS62C25616BL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS62C25616BL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS62C25616BL and IS65C25616BL are high- speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.

They are fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Overview

IS62C25616BL, IS65C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM MARCH.

Key Features

  • High-speed access time: 45 ns.
  • Low Active Power: 50 mW (typical).
  • Low Standby Power: 10 mW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 5V ± 10% power supply.
  • Fully static operation: no clock or refresh required.
  • Package: 44-pin TSOP (Type II).
  • Commercial, Industrial and Automotive temper- ature ranges available.
  • Lead-free available.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS65C25616EL ULTRA LOW POWER CMOS STATIC RAM
IS65C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
IS65C5128BL 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS65C5128EL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS65WV102416DBLL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS65WV102416EALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416FALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416FBLL ULTRA LOW POWER CMOS STATIC RAM