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IS65WV25616ALL - ULTRA LOW POWER CMOS STATIC SRAM

Description

by 16 bits.

CMOS technology.

Features

  • High-speed access time: 55ns, 70ns.
  • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS65WV25616BLL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV25616ECLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV2568DALL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS65WV25616ALL IS65WV25616BLL ISSI® 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • TEMPERATURE OFFERINGS: Option A1: -40°C to +85°C Option A2: -40°C to +105°C Option A3: -40°C to +125°C • Lead-free available DESCRIPTION The ISSI IS65WV25616ALL/IS65WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words by 16 bits.
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