IS65WV25616ALL
FEATURES
- High-speed access time: 55ns, 70ns
- CMOS low power operation
36 m W (typical) operating 9 µW (typical) CMOS standby
- TTL patible interface levels
- Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL)
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- TEMPERATURE OFFERINGS: Option A1: -40°C to +85°C Option A2: -40°C to +105°C Option A3: -40°C to +125°C
- Lead-free available
DESCRIPTION
The ISSI IS65WV25616ALL/IS65WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS1 is LOW, and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input...
