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IS65WV25616BLL - ULTRA LOW POWER CMOS STATIC SRAM

Download the IS65WV25616BLL datasheet PDF. This datasheet also covers the IS65WV25616ALL variant, as both devices belong to the same ultra low power cmos static sram family and are provided as variant models within a single manufacturer datasheet.

General Description

by 16 bits.

CMOS technology.

Key Features

  • High-speed access time: 55ns, 70ns.
  • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS65WV25616ALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS65WV25616BLL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS65WV25616BLL. For precise diagrams, and layout, please refer to the original PDF.

IS65WV25616ALL IS65WV25616BLL ISSI® 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70n...

View more extracted text
ARY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • TEMPERATURE OFFERINGS: Option A1: -40°C to +85°C Option A2: -40°C to +105°C Option A3: -40°C to +125°C • Lead-free available DESCRIPTION The ISSI IS65WV25616ALL/IS65WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words

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