IS65WV25616BLL - ULTRA LOW POWER CMOS STATIC SRAM

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ISSI

Datasheet Details

Part number	IS65WV25616BLL
Manufacturer	ISSI
File Size	381.07 KB
Description	ULTRA LOW POWER CMOS STATIC SRAM
Datasheet	IS65WV25616BLL Datasheet
Note	This datasheet PDF includes multiple part numbers: IS65WV25616BLL, IS65WV25616ALL. Please refer to the document for exact specifications by model.
Additional preview pages of the IS65WV25616BLL datasheet.

Product details

Description

The ISSI IS65WV25616ALL/IS65WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.When CS1 is HIGH (deselected) or when CS1 is LOW, and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input le

Features

High-speed access time: 55ns, 70ns.
CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.

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Other Datasheets by ISSI

IS65WV25616ALL - ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616DBLL - ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616EBLL - ULTRA LOW POWER CMOS STATIC RAM
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Published: Jun 9, 2016 |