IS65WV25616DBLL Datasheet (ULTRA LOW POWER CMOS STATIC SRAM)

Part: IS65WV25616DBLL
Manufacturer: ISSI
Size: 373.71 KB

IS65WV25616DBLL Key Features

High-speed access time: 35, 45, 55 ns
CMOS low power operation
TTL patible interface levels
Single power supply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.3V--3.6V Vdd (IS62/65WV25616DBLL)
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes
Industrial and Automotive temperature support
Lead-free available
2 CS option available

Related ISSI Datasheets

Part Number	Description
IS65WV25616ALL	ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL	ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616EBLL	ULTRA LOW POWER CMOS STATIC RAM
IS65WV25616ECLL	ULTRA LOW POWER CMOS STATIC RAM
IS65WV2568DALL	ULTRA LOW POWER CMOS STATIC RAM

IS65WV25616DBLL Description

The ISSI IS62WV25616DALL and IS62/65WV25616DBLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselcted) or when CS1 is LOW, CS2 is HIGH...