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IS65WV25616ALL - ULTRA LOW POWER CMOS STATIC SRAM

General Description

by 16 bits.

CMOS technology.

Key Features

  • High-speed access time: 55ns, 70ns.
  • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.

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Full PDF Text Transcription for IS65WV25616ALL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS65WV25616ALL. For precise diagrams, and layout, please refer to the original PDF.

IS65WV25616ALL IS65WV25616BLL ISSI® 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70n...

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ARY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • TEMPERATURE OFFERINGS: Option A1: -40°C to +85°C Option A2: -40°C to +105°C Option A3: -40°C to +125°C • Lead-free available DESCRIPTION The ISSI IS65WV25616ALL/IS65WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words

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