IS65WV25616ALL Overview
The ISSI IS65WV25616ALL/IS65WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
IS65WV25616ALL Key Features
- High-speed access time: 55ns, 70ns
- CMOS low power operation
- TTL patible interface levels
- Single power supply 1.65V--2.2V VDD (65WV25616ALL) 2.5V--3.6V VDD (65WV25616BLL)
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Lead-free available
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