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Integrated Silicon Solution Electronic Components Datasheet

IS66WV1M16EALL Datasheet

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

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IS66WV1M16EALL
IS66/67WV1M16EBLL
16Mb LOW VOLTAGE,
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
SEPTEMBER 2018
Features
High-Speed access time :
- 70ns ( IS66WV1M16EALL )
- 60ns (IS66/67WV1M16EBLL )
CMOS Lower Power Operation
Single Power Supply
VDD =1.7V~1.95V( IS66WV1M16EALL )
VDD =2.5V~3.6V (IS66/67WV1M16EBLL )
Three State Outputs
Data Control for Upper and Lower bytes
Lead-free Available
DESCRIPTION
The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are
high-speed,16M bit static RAMs organized as 1M words by
16 bits. It is fabricated using ISSI’s high performance CMOS
technology.
This highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When CS1# is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs. The active LOW Write Enable (WE#)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB#) and Lower Byte (LB#) access.
FUNCTIONAL BLOCK DIAGRAM
The IS66WV1M16 EALL and IS66/67WV1M16EBLL are
packaged in the JEDEC standard 48-ball mini BGA
(6mm x 8mm). The device is also available for die sales.
A0~A19
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
Address
Decode Logic
I/O DATA
CIRCUIT
COLUMN
I/O
1M X 16
DRAM
Memory Array
CS2
CS1#
OE#
WE#
UB#
LB#
Control
Logic
Copyright © 2018 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assu
mes no liability arising out of the application oruse of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification
before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected
to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution,
Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. B3 | 09/17/2018
www.issi.com - SRAM@issi.com
1


Integrated Silicon Solution Electronic Components Datasheet

IS66WV1M16EALL Datasheet

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

No Preview Available !

IS66WV1M16EALL
IS66/67WV1M16EBLL
PIN CONFIGURATIONS
48-Ball miniBGA (6mm x 8mm) Ball Assignment
1 23 456
A
LB# OE#
A0
A1 A2 CS2
B
I/Q8 UB#
A3
A4 CS1# I/Q0
C
I/Q9 I/Q10
A5
A6
I/Q1
IQ2
D
GND IQ11
A17
A7
I/Q3
VDD
E
VDD IQ12
NC
A16 I/Q4 GND
F
I/Q14 I/Q13 A14
A15 I/Q5 I/Q6
G
I/Q15 A19
A12
A13 WE# I/Q7
H
A18 A8
A9
A10 A11
NC
Notes :
1. TSOP package option is under evaluation.
PIN DESCRIPTIONS
Symbol
A0~A19
I/Q0~I/Q15
CS1#, CS2
OE#
WE#
UB#
LB#
VDD
GND
Type
Input
Input /
Output
Input
Input
Input
Input
Input
Power Supply
Power Supply
Description
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable
Upper Byte select
Lower Byte select
Power
Ground
Rev. B3 | 09/17/2018
www.issi.com - SRAM@issi.com
2


Part Number IS66WV1M16EALL
Description ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Maker ISSI
Total Page 15 Pages
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