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IS66WV1M16EALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Datasheet Summary

Description

The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

Features

  • High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL ).
  • CMOS Lower Power Operation.
  • Single Power Supply.
  • VDD =1.7V~1.95V( IS66WV1M16EALL ).
  • VDD =2.5V~3.6V (IS66/67WV1M16EBLL ).
  • Three State Outputs.
  • Data Control for Upper and Lower bytes.
  • Lead-free Available.

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Datasheet preview – IS66WV1M16EALL

Datasheet Details

Part number IS66WV1M16EALL
Manufacturer ISSI
File Size 667.79 KB
Description ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet download datasheet IS66WV1M16EALL Datasheet
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IS66WV1M16EALL IS66/67WV1M16EBLL 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )  CMOS Lower Power Operation  Single Power Supply  VDD =1.7V~1.95V( IS66WV1M16EALL )  VDD =2.5V~3.6V (IS66/67WV1M16EBLL )  Three State Outputs  Data Control for Upper and Lower bytes  Lead-free Available DESCRIPTION The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
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