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IS66WV1M16EALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

General Description

The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

Key Features

  • High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL ).
  • CMOS Lower Power Operation.
  • Single Power Supply.
  • VDD =1.7V~1.95V( IS66WV1M16EALL ).
  • VDD =2.5V~3.6V (IS66/67WV1M16EBLL ).
  • Three State Outputs.
  • Data Control for Upper and Lower bytes.
  • Lead-free Available.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS66WV1M16EALL IS66/67WV1M16EBLL 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )  CMOS Lower Power Operation  Single Power Supply  VDD =1.7V~1.95V( IS66WV1M16EALL )  VDD =2.5V~3.6V (IS66/67WV1M16EBLL )  Three State Outputs  Data Control for Upper and Lower bytes  Lead-free Available DESCRIPTION The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.