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IS66WV1M16DALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

General Description

High-speed access time: 70ns (IS66WV1M16DALL/DBLL) 55ns (IS66WV1M16DBLL) CMOS low power operation Single power supply Vdd = 1.7V - 1.95V (IS66WV1M16DALL) Vdd = 2.5V - 3.6V (IS66WV1M16DBLL) Three state outputs

Key Features

  • ≤ 0.2V, Vin ≥ Vdd.
  • 0.2V, or Vin ≤ 0.2V, f = 0 Com. Ind. Auto. typ. (2) 100 130 150 75 µA OR ULB Control Vdd = Max. , CS1 = Vil, CS2=Vih Vin ≥ Vdd.
  • 0.2V, or Vin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES DESCRIPTION • High-speed access time: – 70ns (IS66WV1M16DALL/DBLL) – 55ns (IS66WV1M16DBLL) • CMOS low power operation • Single power supply – Vdd = 1.7V - 1.95V (IS66WV1M16DALL) – Vdd = 2.5V - 3.6V (IS66WV1M16DBLL) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available The ISSI IS66WV1M16DALL/DBLL is a high-speed, 16M bit static RAMs organized as 1Mb words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.