IS66WV1M16EALL Overview
It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
IS66WV1M16EALL Key Features
- High-Speed access time
- 70ns ( IS66WV1M16EALL )
- 60ns (IS66/67WV1M16EBLL )
- CMOS Lower Power Operation
- Single Power Supply
- VDD =1.7V~1.95V( IS66WV1M16EALL )
- VDD =2.5V~3.6V (IS66/67WV1M16EBLL )
- Three State Outputs
- Data Control for Upper and Lower bytes
- Lead-free Available