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IS66WV1M16DBLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Download the IS66WV1M16DBLL datasheet PDF. This datasheet also covers the IS66WV1M16DALL variant, as both devices belong to the same ultra low power pseudo cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

High-speed access time: 70ns (IS66WV1M16DALL/DBLL) 55ns (IS66WV1M16DBLL) CMOS low power operation Single power supply Vdd = 1.7V - 1.95V (IS66WV1M16DALL) Vdd = 2.5V - 3.6V (IS66WV1M16DBLL) Three state outputs

Key Features

  • ≤ 0.2V, Vin ≥ Vdd.
  • 0.2V, or Vin ≤ 0.2V, f = 0 Com. Ind. Auto. typ. (2) 100 130 150 75 µA OR ULB Control Vdd = Max. , CS1 = Vil, CS2=Vih Vin ≥ Vdd.
  • 0.2V, or Vin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS66WV1M16DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216BLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES DESCRIPTION • High-speed access time: – 70ns (IS66WV1M16DALL/DBLL) – 55ns (IS66WV1M16DBLL) • CMOS low power operation • Single power supply – Vdd = 1.7V - 1.95V (IS66WV1M16DALL) – Vdd = 2.5V - 3.6V (IS66WV1M16DBLL) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available The ISSI IS66WV1M16DALL/DBLL is a high-speed, 16M bit static RAMs organized as 1Mb words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.