Datasheet4U Logo Datasheet4U.com

IS66WV1M16DBLL Datasheet Ultra Low Power Pseudo CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

• High-speed access time: – 70ns (IS66WV1M16DALL/DBLL) – 55ns (IS66WV1M16DBLL) • CMOS low power operation • Single power supply – Vdd = 1.7V - 1.95V (IS66WV1M16DALL) – Vdd = 2.5V - 3.6V (IS66WV1M16DBLL) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available The ISSI IS66WV1M16DALL/DBLL is a high-speed, 16M bit static RAMs organized as 1Mb words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.

Key Features

  • ≤ 0.2V, Vin ≥ Vdd.
  • 0.2V, or Vin ≤ 0.2V, f = 0 Com. Ind. Auto. typ. (2) 100 130 150 75 µA OR ULB Control Vdd = Max. , CS1 = Vil, CS2=Vih Vin ≥ Vdd.
  • 0.2V, or Vin.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216BLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WVC1M16ALL 16Mb Async/Page/Burst CellularRAM
IS66WVC2M16ALL 32Mb Async/Page/Burst CellularRAM
IS66WVC2M16EALL 32Mb Async/Page/Burst CellularRAM

IS66WV1M16DBLL Distributor