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IS66WVC4M16ECLL Datasheet 64mb Async/page/burst Cellularram

Manufacturer: ISSI (now Infineon)

Overview: IS66WVC4M16EALL/CLL IS67WVC4M16EALL/CLL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16EALL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Single device supports asynchronous , page, and burst operation.
  • Mixed Mode supports asynchronous write and synchronous read operation.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns.
  • Burst mode for Read and Write operation.
  • 4, 8, 16,32 or Continuous.
  • Low Power Consumption.
  • Async.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS66WVC4M16EALL 64Mb Async/Page/Burst CellularRAM
IS66WVC4M16ALL 64Mb Async/Page/Burst CellularRAM
IS66WVC1M16ALL 16Mb Async/Page/Burst CellularRAM
IS66WVC2M16ALL 32Mb Async/Page/Burst CellularRAM
IS66WVC2M16EALL 32Mb Async/Page/Burst CellularRAM
IS66WVC2M16ECLL 32Mb Async/Page/Burst CellularRAM
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WVC4M16ECLL Distributor