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IS66WVE2M16BLL - 3.0V Core Async/Page PSRAM

General Description

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 32Mb DRAM core device is organized as 2 Meg x 16 bits.

Key Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 70ns.
  • Intrapage Read access : 20ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30 mA.
  • Intrapage Read < 18mA.
  • Standby < 180 uA (max. ).
  • Deep power-down (DPD) < 3uA (Typ).
  • Low Power Feature.
  • Temperature Controlled Refresh.
  • Partial Array Refresh.
  • Deep power-dow.

📥 Download Datasheet

📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WVE2M16ALL 1.8V Core Async/Page PSRAM
IS66WVE2M16DALL 1.8V Core Async/Page PSRAM
IS66WVE2M16DBLL 3.0V Core Async/Page PSRAM
IS66WVE2M16DBLL 3.0V Core Async/Page PSRAM
IS66WVE2M16EALL 32Mb Async/Page PSRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS66WVE2M16BLL 3.0V Core Async/Page PSRAM Overview The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  VDD 2.7V~3.6V, VDDQ 2.7V~3.