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IS66WVE2M16BLL - 3.0V Core Async/Page PSRAM

IS66WVE2M16BLL Description

IS66WVE2M16BLL 3.0V Core Async/Page PSRAM Overview The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Mem.
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

IS66WVE2M16BLL Features

* Asynchronous and page mode interface
* Dual voltage rails for optional performance
* VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
* Page mode read access
* Interpage Read access : 70ns
* Intrapage Read access : 20ns
* Low Power Consumption
* Asynchronous Operation < 30 mA
* In

IS66WVE2M16BLL Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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Datasheet Details

Part number
IS66WVE2M16BLL
Manufacturer
ISSI
File Size
383.12 KB
Datasheet
IS66WVE2M16BLL-ISSI.pdf
Description
3.0V Core Async/Page PSRAM

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3.0V Core Async Page PSRAM ISSI
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