IS66WVE2M16DALL Datasheet 1.8V Core Async/Page PSRAM

Manufacturer: ISSI (now Infineon)

Overview: IS66WVE2M16DALL 1.8V Core Async/Page PSRAM Overview The IS66WVE2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

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IS66WVE2M16DALL 1.8v core async/page psram by ISSI (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IS66WVE2M16DALL
Manufacturer	ISSI (now Infineon)
File Size	386.98 KB
Description	1.8V Core Async/Page PSRAM
Download	IS66WVE2M16DALL Download (PDF)

Key Features

Asynchronous and page mode interface.
Dual voltage rails for optional performance.
VDD 1.8V, VDDQ 1.8V.
Page mode read access.
Interpage Read access : 70ns.
Intrapage Read access : 20ns.
Low Power Consumption.
Asynchronous Operation < 30 mA.
Intrapage Read < 18mA.
Standby < 150 uA (max. ).
Deep power-down (DPD) < 3uA (Typ).
Low Power Feature.
Temperature Controlled Refresh.
Partial Array Refresh.
Deep power-down (DPD) mo.

More Datasheets from ISSI (now Infineon)

Part Number	Description
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IS66WVE2M16BLL	3.0V Core Async/Page PSRAM
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