IS66WVE2M16BLL Datasheet | ISSI

3.0V Core Async/Page PSRAM Overview The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features - Asynchronous and page mode interface - Dual voltage rails for optional performance - VDD 2.7V~3.6V, VDDQ 2.7V~3.6V - Page mode read access -...