IS66WVE2M16EALL Datasheet 32Mb Async/Page PSRAM

Manufacturer: ISSI (now Infineon)

Overview: IS66/67WVE2M16EALL/EBLL/ECLL IS66/67WVE2M16TALL/TBLL/TCLL 32Mb Async/Page PSRAM SEPTEMBER 2022 Overview The IS66/67WVE2M16EALL/BLL/CLL and IS66/67WVE2M16TALL/BLL/CLL are integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

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IS66WVE2M16EALL 32mb async/page psram by ISSI (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IS66WVE2M16EALL
Manufacturer	ISSI (now Infineon)
File Size	703.49 KB
Description	32Mb Async/Page PSRAM
Download	IS66WVE2M16EALL Download (PDF)

Key Features

Asynchronous and page mode interface.
Dual voltage rails for optional performance.
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
Page mode read access.
Interpage Read access : 60ns, 70ns.
Intrapage Read access : 25ns.
Low Power Consumption.
Asynchronous Operation < 30 mA.
Intrapage Read < 23mA.
Standby < 180 µA (max. ).
Deep power-down (DPD).
ALL/CLL: < 3µA (Typ).

More Datasheets from ISSI (now Infineon)

Part Number	Description
IS66WVE2M16EBLL	32Mb Async/Page PSRAM
IS66WVE2M16ECLL	32Mb Async/Page PSRAM
IS66WVE2M16ALL	1.8V Core Async/Page PSRAM
IS66WVE2M16BLL	3.0V Core Async/Page PSRAM
IS66WVE2M16DALL	1.8V Core Async/Page PSRAM
IS66WVE2M16DBLL	3.0V Core Async/Page PSRAM
IS66WVE2M16DBLL	3.0V Core Async/Page PSRAM
IS66WVE2M16TALL	32Mb Async/Page PSRAM
IS66WVE2M16TBLL	32Mb Async/Page PSRAM
IS66WVE2M16TCLL	32Mb Async/Page PSRAM