Description
The IS66/67WVQ16M4FALL/BLL are integrated memory device containing 64Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 16M words by 4 bits.
Features
- Industry Standard Serial Interface - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3).
- High Performance - Double Data Rate (DDR) Operation: 200MHz (200MB/s) - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configurable Latency for Read/Write Operation - Supports Variable Latency mode and Fixed Latency mode - Configurable Dr.