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IS67WVE51216TBLL - 8Mb Async/Page PSRAM

Download the IS67WVE51216TBLL datasheet PDF (IS66WVE51216EALL included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 8mb async/page psram.

Description

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 8Mb DRAM core device is organized as 512K x 16 bits.

Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 60ns, 70ns.
  • Intrapage Read access : 25ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30 mA.
  • Intrapage Read < 23 mA.
  • Standby < 150 uA (max. ).
  • Deep power-down (DPD).
  • ALL/CLL: < 3µA (Typ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS66WVE51216EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IS66/IS67WVE51216EALL/EBLL/ECLL IS67/IS67WVE51216TALL/TBLL/TCLL 8Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE51216EALL/BLL/CLL and IS66/67WVE51216TALL/BLL/CLL are integrated memory device containing 8Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  BLL: VDD 2.7V~3.
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