IS67WVE51216TBLL
Overview
The IS66/67WVE51216EALL/BLL/CLL and IS66/67WVE51216TALL/BLL/CLL are integrated memory device containing 8Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
- Asynchronous and page mode interface
- Dual voltage rails for optional performance
- ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
- BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
- CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
- Page mode read access
- Interpage Read access : 60ns, 70ns
- Intrapage Read access : 25ns
- Low Power Consumption
- Asynchronous Operation < 30 m A
- Intrapage Read < 23 m A
- Standby < 150 u A (max.)
- Deep power-down (DPD)
- ALL/CLL: < 3µA (Typ)
-...
