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IS67WVE51216EBLL Datasheet - ISSI

IS67WVE51216EBLL 8Mb Async/Page PSRAM

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 8Mb DRAM core device is organized as 512K x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSR.
IS66/IS67WVE51216EALL/EBLL/ECLL IS67/IS67WVE51216TALL/TBLL/TCLL 8Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE51216EALL/BLL/CLL and IS66/67WVE51216TALL/BLL/CLL are integrated memory device containing 8Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce s.

IS67WVE51216EBLL Features

* Asynchronous and page mode interface

* Dual voltage rails for optional performance

* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

* Page mode read access

* Interpage Read access : 60ns, 70ns

* Intrap

IS67WVE51216EBLL Datasheet (645.11 KB)

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Datasheet Details

Part number:

IS67WVE51216EBLL

Manufacturer:

ISSI

File Size:

645.11 KB

Description:

8mb async/page psram.

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IS67WVE51216EBLL 8Mb Async Page PSRAM ISSI

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