30N60
30N60 is High speed IGBT manufactured by IXYS.
Features l International standard packages l 2nd generation HDMOSTM process l Low V
CE(sat)
- for low on-state conduction losses l High current handling capability l MOS Gate turn-on
- drive simplicity l Voltage rating guaranteed at high temperature (125°C)
Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies
Advantages l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) l High power density
© 1996 IXYS All rights reserved
91512E (3/96)
IXGH 30N60 IXGM 30N60 IXGH 30N60A IXGM 30N60A
Symbol gfs
Cies Coes Cres Qg Qge Qgc td(on) tri t d(off) tfi Eoff td(on) tri Eon td(off) tfi
Eoff
Rth JC Rth CK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
IC = IC90; VCE = 10 V,
8 16
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
2800 p F
230 p F
70 p F
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load,
=
25°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Switching times may increase for VCE (Clamp) > 0.8
- VCES, 30N60A higher TJ or increased RG 30N60A
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times may increase for VCE (Clamp) > 0.8
- V ,...