• Part: 30N60
  • Description: High speed IGBT
  • Manufacturer: IXYS
  • Size: 61.51 KB
Download 30N60 Datasheet PDF
IXYS
30N60
30N60 is High speed IGBT manufactured by IXYS.
Features l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) l High power density © 1996 IXYS All rights reserved 91512E (3/96) IXGH 30N60 IXGM 30N60 IXGH 30N60A IXGM 30N60A Symbol gfs Cies Coes Cres Qg Qge Qgc td(on) tri t d(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Rth JC Rth CK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = IC90; VCE = 10 V, 8 16 Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz 2800 p F 230 p F 70 p F IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, = 25°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 33 Ω Switching times may increase for VCE (Clamp) > 0.8 - VCES, 30N60A higher TJ or increased RG 30N60A Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 - V ,...